Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFN210N20P

IXFN210N20P

For Reference Only

Part Number IXFN210N20P
PNEDA Part # IXFN210N20P
Description MOSFET N-CH 200V 188A SOT-227B
Manufacturer IXYS
Unit Price
1 ---------- $491.9407
50 ---------- $468.8810
100 ---------- $445.8213
200 ---------- $422.7616
400 ---------- $403.5451
500 ---------- $384.3287
In Stock 133
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 22 - Apr 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN210N20P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN210N20P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN210N20P, IXFN210N20P Datasheet (Total Pages: 5, Size: 124.03 KB)
PDFIXFN210N20P Datasheet Cover
IXFN210N20P Datasheet Page 2 IXFN210N20P Datasheet Page 3 IXFN210N20P Datasheet Page 4 IXFN210N20P Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFN210N20P Datasheet
  • where to find IXFN210N20P
  • IXYS

  • IXYS IXFN210N20P
  • IXFN210N20P PDF Datasheet
  • IXFN210N20P Stock

  • IXFN210N20P Pinout
  • Datasheet IXFN210N20P
  • IXFN210N20P Supplier

  • IXYS Distributor
  • IXFN210N20P Price
  • IXFN210N20P Distributor

IXFN210N20P Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C188A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs255nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds18600pF @ 25V
FET Feature-
Power Dissipation (Max)1070W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

DMN3730UFB4-7B

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

750mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

460mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

64.3pF @ 25V

FET Feature

-

Power Dissipation (Max)

470mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN1006-3

Package / Case

3-XFDFN

FQP6N90

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.9Ohm @ 2.9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1880pF @ 25V

FET Feature

-

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

168nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

10918pF @ 25V

FET Feature

-

Power Dissipation (Max)

263W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

PMV40UN2R

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

44mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

635pF @ 15V

FET Feature

-

Power Dissipation (Max)

490mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

MCH3377-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

83mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

375pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-MCPH

Package / Case

3-SMD, Flat Leads

Recently Sold

MC9RS08KA2CSC

MC9RS08KA2CSC

NXP

IC MCU 8BIT 2KB FLASH 8SOIC

MAX3087EESA+

MAX3087EESA+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 8SOIC

MT46V32M16P-5B IT:J

MT46V32M16P-5B IT:J

Micron Technology Inc.

IC DRAM 512M PARALLEL 66TSOP

FDV302P

FDV302P

ON Semiconductor

MOSFET P-CH 25V 120MA SOT-23

BA2904SFV-E2

BA2904SFV-E2

Rohm Semiconductor

IC OPAMP GP 2 CIRCUIT 8SSOPB

PCF8575TS/1,112

PCF8575TS/1,112

NXP

IC I/O EXPANDER I2C 16B 24SSOP

MPC8306SVMADDCA

MPC8306SVMADDCA

NXP

IC MPU MPC83XX 266MHZ 369BGA

SR1LARU

SR1LARU

STMicroelectronics

IC SMART RESET 4PIN 6.0S 6UDFN

BZV55C4V7

BZV55C4V7

Microsemi

DIODE ZENER 4.7V DO213AA

1SMA5940BT3G

1SMA5940BT3G

ON Semiconductor

DIODE ZENER 43V 1.5W SMA

T491A105K035AT

T491A105K035AT

KEMET

CAP TANT 1UF 10% 35V 1206

G5LE-14 DC12

G5LE-14 DC12

Omron Electronics Inc-EMC Div

RELAY GEN PURPOSE SPDT 10A 12V