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IXTQ14N60P

IXTQ14N60P

For Reference Only

Part Number IXTQ14N60P
PNEDA Part # IXTQ14N60P
Description MOSFET N-CH 600V 14A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 27 - May 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ14N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ14N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ14N60P, IXTQ14N60P Datasheet (Total Pages: 5, Size: 193.9 KB)
PDFIXTQ14N60P Datasheet Cover
IXTQ14N60P Datasheet Page 2 IXTQ14N60P Datasheet Page 3 IXTQ14N60P Datasheet Page 4 IXTQ14N60P Datasheet Page 5

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IXTQ14N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs550mOhm @ 7A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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