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IXTQ30N50L

IXTQ30N50L

For Reference Only

Part Number IXTQ30N50L
PNEDA Part # IXTQ30N50L
Description MOSFET N-CH 500V 30A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,208
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ30N50L Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ30N50L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ30N50L, IXTQ30N50L Datasheet (Total Pages: 5, Size: 143.08 KB)
PDFIXTT30N50L Datasheet Cover
IXTT30N50L Datasheet Page 2 IXTT30N50L Datasheet Page 3 IXTT30N50L Datasheet Page 4 IXTT30N50L Datasheet Page 5

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IXTQ30N50L Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10200pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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