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IXTT16N10D2

IXTT16N10D2

For Reference Only

Part Number IXTT16N10D2
PNEDA Part # IXTT16N10D2
Description MOSFET N-CH 100V 16A TO-268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT16N10D2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT16N10D2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT16N10D2, IXTT16N10D2 Datasheet (Total Pages: 5, Size: 188.86 KB)
PDFIXTH16N10D2 Datasheet Cover
IXTH16N10D2 Datasheet Page 2 IXTH16N10D2 Datasheet Page 3 IXTH16N10D2 Datasheet Page 4 IXTH16N10D2 Datasheet Page 5

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IXTT16N10D2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs64mOhm @ 8A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs225nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5700pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)830W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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