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BSC016N03LSGATMA1

BSC016N03LSGATMA1

For Reference Only

Part Number BSC016N03LSGATMA1
PNEDA Part # BSC016N03LSGATMA1
Description MOSFET N-CH 30V 100A TDSON8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC016N03LSGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC016N03LSGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSC016N03LSGATMA1, BSC016N03LSGATMA1 Datasheet (Total Pages: 10, Size: 387.33 KB)
PDFBSC016N03LSGATMA1 Datasheet Cover
BSC016N03LSGATMA1 Datasheet Page 2 BSC016N03LSGATMA1 Datasheet Page 3 BSC016N03LSGATMA1 Datasheet Page 4 BSC016N03LSGATMA1 Datasheet Page 5 BSC016N03LSGATMA1 Datasheet Page 6 BSC016N03LSGATMA1 Datasheet Page 7 BSC016N03LSGATMA1 Datasheet Page 8 BSC016N03LSGATMA1 Datasheet Page 9 BSC016N03LSGATMA1 Datasheet Page 10

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BSC016N03LSGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs131nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10000pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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