Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC016N06NSATMA1

BSC016N06NSATMA1

For Reference Only

Part Number BSC016N06NSATMA1
PNEDA Part # BSC016N06NSATMA1
Description MOSFET N-CH 60V 30A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,752
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC016N06NSATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC016N06NSATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC016N06NSATMA1 Datasheet
  • where to find BSC016N06NSATMA1
  • Infineon Technologies

  • Infineon Technologies BSC016N06NSATMA1
  • BSC016N06NSATMA1 PDF Datasheet
  • BSC016N06NSATMA1 Stock

  • BSC016N06NSATMA1 Pinout
  • Datasheet BSC016N06NSATMA1
  • BSC016N06NSATMA1 Supplier

  • Infineon Technologies Distributor
  • BSC016N06NSATMA1 Price
  • BSC016N06NSATMA1 Distributor

BSC016N06NSATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 30V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8 FL
Package / Case8-PowerTDFN

The Products You May Be Interested In

IRFP250MPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

123nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2159pF @ 25V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

VN0106N3-G-P003

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

350mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

65pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TSM1N80CW RPG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

21.6Ohm @ 150mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

TSM900N06CP ROG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 15V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

2N7002T-7-G

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

16SVPF180M

16SVPF180M

Panasonic Electronic Components

CAP ALUM POLY 180UF 20% 16V SMD

V23050-A1110-A533

V23050-A1110-A533

TE Connectivity Potter & Brumfield Relays

RELAY SAFETY 6PST 8A 110V

NC7SZ00P5X

NC7SZ00P5X

ON Semiconductor

IC GATE NAND 1CH 2-INP SC70-5

RJR26FW102R

RJR26FW102R

Bourns

TRIMMER 1K OHM 0.25W PC PIN TOP

YC324-JK-0710KL

YC324-JK-0710KL

Yageo

RES ARRAY 4 RES 10K OHM 2012

AD7768BSTZ

AD7768BSTZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64LQFP

74HC160N,652

74HC160N,652

NXP

IC SYNC BCD DECADE COUNT 16DIP

2873000202

2873000202

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

MAX3485ESA+

MAX3485ESA+

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

BAT46WJ,115

BAT46WJ,115

Nexperia

DIODE SCHOTTKY 100V 250MA SOD323

74HCT32D

74HCT32D

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14SOIC

TCA785

TCA785

Infineon Technologies

IC PHASE CONTROL 250MA OUT 16DIP