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BSZ013NE2LS5IATMA1

BSZ013NE2LS5IATMA1

For Reference Only

Part Number BSZ013NE2LS5IATMA1
PNEDA Part # BSZ013NE2LS5IATMA1
Description MOSFET N-CH 25V 32A 8SON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSZ013NE2LS5IATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSZ013NE2LS5IATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSZ013NE2LS5IATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C32A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3400pF @ 12V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8-FL
Package / Case8-PowerTDFN

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