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IPP065N04N G

IPP065N04N G

For Reference Only

Part Number IPP065N04N G
PNEDA Part # IPP065N04N-G
Description MOSFET N-CH 40V 50A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,456
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP065N04N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP065N04N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP065N04N G, IPP065N04N G Datasheet (Total Pages: 9, Size: 556.04 KB)
PDFIPP065N04N G Datasheet Cover
IPP065N04N G Datasheet Page 2 IPP065N04N G Datasheet Page 3 IPP065N04N G Datasheet Page 4 IPP065N04N G Datasheet Page 5 IPP065N04N G Datasheet Page 6 IPP065N04N G Datasheet Page 7 IPP065N04N G Datasheet Page 8 IPP065N04N G Datasheet Page 9

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IPP065N04N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 20V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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