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IPW60R099C6FKSA1

IPW60R099C6FKSA1

For Reference Only

Part Number IPW60R099C6FKSA1
PNEDA Part # IPW60R099C6FKSA1
Description MOSFET N-CH 600V 37.9A TO247
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 17,040
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPW60R099C6FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPW60R099C6FKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPW60R099C6FKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs119nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2660pF @ 100V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

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