Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPW60R280P6FKSA1

IPW60R280P6FKSA1

For Reference Only

Part Number IPW60R280P6FKSA1
PNEDA Part # IPW60R280P6FKSA1
Description MOSFET N-CH 600V TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 22 - Apr 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPW60R280P6FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPW60R280P6FKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPW60R280P6FKSA1 Datasheet
  • where to find IPW60R280P6FKSA1
  • Infineon Technologies

  • Infineon Technologies IPW60R280P6FKSA1
  • IPW60R280P6FKSA1 PDF Datasheet
  • IPW60R280P6FKSA1 Stock

  • IPW60R280P6FKSA1 Pinout
  • Datasheet IPW60R280P6FKSA1
  • IPW60R280P6FKSA1 Supplier

  • Infineon Technologies Distributor
  • IPW60R280P6FKSA1 Price
  • IPW60R280P6FKSA1 Distributor

IPW60R280P6FKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs25.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1190pF @ 100V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

The Products You May Be Interested In

SQJA84EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 25V

FET Feature

-

Power Dissipation (Max)

55W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

FDB14N30TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NVTFS5C466NLWFTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 25V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

NTZS3151PT1H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

860mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

150mOhm @ 950mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

458pF @ 16V

FET Feature

-

Power Dissipation (Max)

170mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-563-6

Package / Case

SOT-563, SOT-666

NTMFS4C35NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 15V

FET Feature

-

Power Dissipation (Max)

780mW (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

Recently Sold

BA2904SFV-E2

BA2904SFV-E2

Rohm Semiconductor

IC OPAMP GP 2 CIRCUIT 8SSOPB

PIC12F1840-I/SN

PIC12F1840-I/SN

Microchip Technology

IC MCU 8BIT 7KB FLASH 8SOIC

BC184C

BC184C

ON Semiconductor

TRANS NPN 30V 0.5A TO-92

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

AOZ1094AIL

AOZ1094AIL

Alpha & Omega Semiconductor

IC REG BUCK ADJUSTABLE 5A 8SOIC

NC7WZ241K8X

NC7WZ241K8X

ON Semiconductor

IC BUFFER NON-INVERT 5.5V US8

MCP6566T-E/OT

MCP6566T-E/OT

Microchip Technology

IC COMPARATOR O-D 1.8V SOT23-5

PIC18F6390-I/PT

PIC18F6390-I/PT

Microchip Technology

IC MCU 8BIT 8KB FLASH 64TQFP

1SMB28AT3G

1SMB28AT3G

Littelfuse

TVS DIODE 28V 45.4V SMB

MAX15006AATT/V+T

MAX15006AATT/V+T

Maxim Integrated

IC REG LINEAR 3.3V 50MA 6TDFN

EN5329QI

EN5329QI

Intel

DC DC CONVERTER 0.6-4.9V 10W

WSL2010R0100FEA

WSL2010R0100FEA

Vishay Dale

RES 0.01 OHM 1% 1/2W 2010