Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFB3207PBF

IRFB3207PBF

For Reference Only

Part Number IRFB3207PBF
PNEDA Part # IRFB3207PBF
Description MOSFET N-CH 75V 180A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 15,132
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 27 - May 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFB3207PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFB3207PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFB3207PBF, IRFB3207PBF Datasheet (Total Pages: 12, Size: 379.69 KB)
PDFIRFSL3207 Datasheet Cover
IRFSL3207 Datasheet Page 2 IRFSL3207 Datasheet Page 3 IRFSL3207 Datasheet Page 4 IRFSL3207 Datasheet Page 5 IRFSL3207 Datasheet Page 6 IRFSL3207 Datasheet Page 7 IRFSL3207 Datasheet Page 8 IRFSL3207 Datasheet Page 9 IRFSL3207 Datasheet Page 10 IRFSL3207 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFB3207PBF Datasheet
  • where to find IRFB3207PBF
  • Infineon Technologies

  • Infineon Technologies IRFB3207PBF
  • IRFB3207PBF PDF Datasheet
  • IRFB3207PBF Stock

  • IRFB3207PBF Pinout
  • Datasheet IRFB3207PBF
  • IRFB3207PBF Supplier

  • Infineon Technologies Distributor
  • IRFB3207PBF Price
  • IRFB3207PBF Distributor

IRFB3207PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 50V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

IPB05N03LAT

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3110pF @ 15V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPN60R1K5CEATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

9.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 100V

FET Feature

-

Power Dissipation (Max)

5W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223

Package / Case

SOT-223-3

STP200N4F3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRF6613TR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

23A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 23A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5950pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MT

Package / Case

DirectFET™ Isometric MT

TPH3206LDB

Transphorm

Manufacturer

Transphorm

Series

-

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 10A, 8V

Vgs(th) (Max) @ Id

2.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 480V

FET Feature

-

Power Dissipation (Max)

81W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (8x8)

Package / Case

4-PowerDFN

Recently Sold

AT90S1200-12SC

AT90S1200-12SC

Microchip Technology

IC MCU 8BIT 1KB FLASH 20SOIC

MAX489EESD+T

MAX489EESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

CDRH124NP-100MC

CDRH124NP-100MC

Sumida

FIXED IND 10UH 4.5A 28 MOHM SMD

SMF6.0A

SMF6.0A

Littelfuse

TVS DIODE 6V 10.3V SOD123F

742792410

742792410

Wurth Electronics

FERRITE BEAD 60 OHM 1806 1LN

NTS0104BQ,115

NTS0104BQ,115

NXP

IC TRNSLTR BIDIR 14DHVQFN

XC7Z030-1FBG676I

XC7Z030-1FBG676I

Xilinx

IC SOC CORTEX-A9 667MHZ 676FCBGA

YC324-JK-072KL

YC324-JK-072KL

Yageo

RES ARRAY 4 RES 2K OHM 2012

MCP9700AT-E/LT

MCP9700AT-E/LT

Microchip Technology

SENSOR ANALOG -40C-125C SC70-5

403C35E12M00000

403C35E12M00000

CTS Frequency Controls

CRYSTAL 12.0000MHZ 20PF SMD

ISL6262CRZ

ISL6262CRZ

Renesas Electronics America Inc.

IC REG CONV INTEL 1OUT 48QFN

AFT27S010NT1

AFT27S010NT1

NXP

FET RF NCH 65V 2700MHZ PLD1.5W