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APT75GN60BG

APT75GN60BG

For Reference Only

Part Number APT75GN60BG
PNEDA Part # APT75GN60BG
Description IGBT 600V 155A 536W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT75GN60BG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT75GN60BG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT75GN60BG Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)155A
Current - Collector Pulsed (Icm)225A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 75A
Power - Max536W
Switching Energy2500µJ (on), 2140µJ (off)
Input TypeStandard
Gate Charge485nC
Td (on/off) @ 25°C47ns/385ns
Test Condition400V, 75A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Reverse Recovery Time (trr)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Vce(on) (Max) @ Vge, Ic

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