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MJ11012G

MJ11012G

For Reference Only

Part Number MJ11012G
PNEDA Part # MJ11012G
Description TRANS NPN DARL 60V 30A TO-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,744
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MJ11012G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMJ11012G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
MJ11012G, MJ11012G Datasheet (Total Pages: 4, Size: 115.83 KB)
PDFMJ11016 Datasheet Cover
MJ11016 Datasheet Page 2 MJ11016 Datasheet Page 3 MJ11016 Datasheet Page 4

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MJ11012G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)30A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A, 5V
Power - Max200W
Frequency - Transition4MHz
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-204 (TO-3)

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