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MUN5335DW1T1G

MUN5335DW1T1G

For Reference Only

Part Number MUN5335DW1T1G
PNEDA Part # MUN5335DW1T1G
Description TRANS PREBIAS NPN/PNP SOT363
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 1,521,402
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MUN5335DW1T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMUN5335DW1T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
MUN5335DW1T1G, MUN5335DW1T1G Datasheet (Total Pages: 10, Size: 135.01 KB)
PDFNSVB123JPDXV6T1G Datasheet Cover
NSVB123JPDXV6T1G Datasheet Page 2 NSVB123JPDXV6T1G Datasheet Page 3 NSVB123JPDXV6T1G Datasheet Page 4 NSVB123JPDXV6T1G Datasheet Page 5 NSVB123JPDXV6T1G Datasheet Page 6 NSVB123JPDXV6T1G Datasheet Page 7 NSVB123JPDXV6T1G Datasheet Page 8 NSVB123JPDXV6T1G Datasheet Page 9 NSVB123JPDXV6T1G Datasheet Page 10

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MUN5335DW1T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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