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NTLJS3113PT1G

NTLJS3113PT1G

For Reference Only

Part Number NTLJS3113PT1G
PNEDA Part # NTLJS3113PT1G
Description MOSFET P-CH 20V 3.5A 6WDFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 27 - May 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTLJS3113PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTLJS3113PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTLJS3113PT1G, NTLJS3113PT1G Datasheet (Total Pages: 6, Size: 145.46 KB)
PDFNTLJS3113PTAG Datasheet Cover
NTLJS3113PTAG Datasheet Page 2 NTLJS3113PTAG Datasheet Page 3 NTLJS3113PTAG Datasheet Page 4 NTLJS3113PTAG Datasheet Page 5 NTLJS3113PTAG Datasheet Page 6

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NTLJS3113PT1G Specifications

ManufacturerON Semiconductor
SeriesµCool™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15.7nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1329pF @ 16V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WDFN (2x2)
Package / Case6-WDFN Exposed Pad

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