NTMD4820NR2G
For Reference Only
| Part Number | NTMD4820NR2G |
| PNEDA Part # | NTMD4820NR2G |
| Description | MOSFET 2N-CH 30V 4.9A 8SOIC |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 21,066 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 27 - May 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NTMD4820NR2G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NTMD4820NR2G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NTMD4820NR2G Datasheet
- where to find NTMD4820NR2G
- ON Semiconductor
- ON Semiconductor NTMD4820NR2G
- NTMD4820NR2G PDF Datasheet
- NTMD4820NR2G Stock
- NTMD4820NR2G Pinout
- Datasheet NTMD4820NR2G
- NTMD4820NR2G Supplier
- ON Semiconductor Distributor
- NTMD4820NR2G Price
- NTMD4820NR2G Distributor
NTMD4820NR2G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 940pF @ 15V |
| Power - Max | 750mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
The Products You May Be Interested In
|
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9.5A, 38A Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 3mA, 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V, 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V, 1200pF @ 30V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Diodes Incorporated Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3.1A, 2.4A Rds On (Max) @ Id, Vgs 85mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 731pF @ 20V Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PowerDI3333-8 |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-XFBGA, FCBGA Supplier Device Package EFCP2718-6CE-020 |
Manufacturer Microsemi Corporation Series - FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 25A Rds On (Max) @ Id, Vgs 180mOhm @ 21A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5448pF @ 25V Power - Max 208W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP1 Supplier Device Package SP1 |
