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STB33N60DM2

STB33N60DM2

For Reference Only

Part Number STB33N60DM2
PNEDA Part # STB33N60DM2
Description MOSFET N-CH 600V 24A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB33N60DM2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB33N60DM2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB33N60DM2, STB33N60DM2 Datasheet (Total Pages: 20, Size: 912.98 KB)
PDFSTB33N60DM2 Datasheet Cover
STB33N60DM2 Datasheet Page 2 STB33N60DM2 Datasheet Page 3 STB33N60DM2 Datasheet Page 4 STB33N60DM2 Datasheet Page 5 STB33N60DM2 Datasheet Page 6 STB33N60DM2 Datasheet Page 7 STB33N60DM2 Datasheet Page 8 STB33N60DM2 Datasheet Page 9 STB33N60DM2 Datasheet Page 10 STB33N60DM2 Datasheet Page 11

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STB33N60DM2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1870pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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