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STD80N4F6

STD80N4F6

For Reference Only

Part Number STD80N4F6
PNEDA Part # STD80N4F6
Description MOSFET N-CH 40V 80A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 22,890
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD80N4F6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD80N4F6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD80N4F6, STD80N4F6 Datasheet (Total Pages: 16, Size: 1,123.42 KB)
PDFSTD80N4F6 Datasheet Cover
STD80N4F6 Datasheet Page 2 STD80N4F6 Datasheet Page 3 STD80N4F6 Datasheet Page 4 STD80N4F6 Datasheet Page 5 STD80N4F6 Datasheet Page 6 STD80N4F6 Datasheet Page 7 STD80N4F6 Datasheet Page 8 STD80N4F6 Datasheet Page 9 STD80N4F6 Datasheet Page 10 STD80N4F6 Datasheet Page 11

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STD80N4F6 Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2150pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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