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STL11N3LLH6

STL11N3LLH6

For Reference Only

Part Number STL11N3LLH6
PNEDA Part # STL11N3LLH6
Description MOSFET N-CH 30V 11A POWERFLAT
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,842
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STL11N3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTL11N3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STL11N3LLH6, STL11N3LLH6 Datasheet (Total Pages: 14, Size: 682.92 KB)
PDFSTL11N3LLH6 Datasheet Cover
STL11N3LLH6 Datasheet Page 2 STL11N3LLH6 Datasheet Page 3 STL11N3LLH6 Datasheet Page 4 STL11N3LLH6 Datasheet Page 5 STL11N3LLH6 Datasheet Page 6 STL11N3LLH6 Datasheet Page 7 STL11N3LLH6 Datasheet Page 8 STL11N3LLH6 Datasheet Page 9 STL11N3LLH6 Datasheet Page 10 STL11N3LLH6 Datasheet Page 11

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STL11N3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1690pF @ 24V
FET Feature-
Power Dissipation (Max)2W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (3.3x3.3)
Package / Case8-PowerVDFN

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