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STU7N65M2

STU7N65M2

For Reference Only

Part Number STU7N65M2
PNEDA Part # STU7N65M2
Description MOSFET N-CH 650V 5A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 21,096
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU7N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU7N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STU7N65M2, STU7N65M2 Datasheet (Total Pages: 18, Size: 876.01 KB)
PDFSTP7N65M2 Datasheet Cover
STP7N65M2 Datasheet Page 2 STP7N65M2 Datasheet Page 3 STP7N65M2 Datasheet Page 4 STP7N65M2 Datasheet Page 5 STP7N65M2 Datasheet Page 6 STP7N65M2 Datasheet Page 7 STP7N65M2 Datasheet Page 8 STP7N65M2 Datasheet Page 9 STP7N65M2 Datasheet Page 10 STP7N65M2 Datasheet Page 11

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STU7N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 100V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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