Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI2325DS-T1-E3

SI2325DS-T1-E3

For Reference Only

Part Number SI2325DS-T1-E3
PNEDA Part # SI2325DS-T1-E3
Description MOSFET P-CH 150V 0.53A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 580,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2325DS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2325DS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2325DS-T1-E3, SI2325DS-T1-E3 Datasheet (Total Pages: 9, Size: 196.54 KB)
PDFSI2325DS-T1-GE3 Datasheet Cover
SI2325DS-T1-GE3 Datasheet Page 2 SI2325DS-T1-GE3 Datasheet Page 3 SI2325DS-T1-GE3 Datasheet Page 4 SI2325DS-T1-GE3 Datasheet Page 5 SI2325DS-T1-GE3 Datasheet Page 6 SI2325DS-T1-GE3 Datasheet Page 7 SI2325DS-T1-GE3 Datasheet Page 8 SI2325DS-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI2325DS-T1-E3 Datasheet
  • where to find SI2325DS-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI2325DS-T1-E3
  • SI2325DS-T1-E3 PDF Datasheet
  • SI2325DS-T1-E3 Stock

  • SI2325DS-T1-E3 Pinout
  • Datasheet SI2325DS-T1-E3
  • SI2325DS-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI2325DS-T1-E3 Price
  • SI2325DS-T1-E3 Distributor

SI2325DS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

IPB80N06S2L11ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2075pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RRS075P03TB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

AOD496

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPA95R750P7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 220µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

712pF @ 400V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

NDS7002A_D87Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

280mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23 (TO-236AB)

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

JANTX1N6642U

JANTX1N6642U

Microsemi

DIODE GEN PURP 75V 300MA D5B

ADM2582EBRWZ

ADM2582EBRWZ

Analog Devices

DGTL ISO RS422/RS485 20SOIC

C0805C102K2GECAUTO

C0805C102K2GECAUTO

KEMET

CAP CER 0805 1NF 200V C0G 10%

LM2902N

LM2902N

ON Semiconductor

IC OPAMP GP 4 CIRCUIT 14DIP

IHLP6767GZER8R2M11

IHLP6767GZER8R2M11

Vishay Dale

FIXED IND 8.2UH 21A 8.1 MOHM SMD

1014-12

1014-12

Microsemi

RF TRANS NPN 50V 1.4GHZ 55LT

XC6204B252MR-G

XC6204B252MR-G

Torex Semiconductor Ltd

IC REG LINEAR 2.5V 150MA SOT25

SMBJ12CA

SMBJ12CA

TVS DIODE 12V 19.9V SMB

0466001.NR

0466001.NR

Littelfuse

FUSE BOARD MNT 1A 63VAC/VDC 1206

DS1500WE+

DS1500WE+

Maxim Integrated

IC RTC CLK/CALENDAR PAR 32-TSOP

MPZ2012S300AT000

MPZ2012S300AT000

TDK

FERRITE BEAD 30 OHM 0805 1LN

TLP785(GRH-TP6,F)

TLP785(GRH-TP6,F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-SMD