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SI7997DP-T1-GE3

SI7997DP-T1-GE3

For Reference Only

Part Number SI7997DP-T1-GE3
PNEDA Part # SI7997DP-T1-GE3
Description MOSFET 2P-CH 30V 60A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 14,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7997DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7997DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7997DP-T1-GE3, SI7997DP-T1-GE3 Datasheet (Total Pages: 13, Size: 311.15 KB)
PDFSI7997DP-T1-GE3 Datasheet Cover
SI7997DP-T1-GE3 Datasheet Page 2 SI7997DP-T1-GE3 Datasheet Page 3 SI7997DP-T1-GE3 Datasheet Page 4 SI7997DP-T1-GE3 Datasheet Page 5 SI7997DP-T1-GE3 Datasheet Page 6 SI7997DP-T1-GE3 Datasheet Page 7 SI7997DP-T1-GE3 Datasheet Page 8 SI7997DP-T1-GE3 Datasheet Page 9 SI7997DP-T1-GE3 Datasheet Page 10 SI7997DP-T1-GE3 Datasheet Page 11

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SI7997DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6200pF @ 15V
Power - Max46W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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