A high performance GaN power IC with integrated grid driver, protection, and temperature reporting

Ti's LMG3522R030 GaN FET features an integrated driver and protection for switching mode power converters, enabling designers to achieve levels of power density and efficiency. The power IC integrates a silicon driver to enable switching speeds up to 150 V/ns.

TI's integrated precision gate bias enables a higher switching SOA than discrete silicon gate drivers. This integration, combined with TI's low inductance package, provides clean switching and minimal ringing in hard switching power topologies. The adjustable grid drive strength allows control of the conversion rate (20 V/ns to 150 V/ns), which actively controls EMI and optimizes switching performance.

Advanced power management features include digital temperature reporting and fault detection. GaN FeTs' temperatures are reported via variable duty ratio PWM output, which simplifies device load management. Reported faults include overtemperature, overcurrent, and undervoltage lock-out (UVLO) monitoring.

Features

● 650 V GaN-on-Si FET with an integrated gate driver:
-   Integrated high-precision gate bias voltage
-   FET hold-off: 200 V/ns
-   Switching frequency: 2 MHz
-   Supply operation range: 7.5V to 18V
-   Slew rate: 20 V/ns to 150 V/ns

● Optimizes the switching performance and EMI mitigation

● Advanced power management:
-   Digital temperature PWM output

● Robust protection:
-   Cycle-by-cycle overcurrent and latched short-circuit protection with a response of < 100 ns
-   Withstands a 720 V surge while hard-switching
-   Self-protection from internal overtemperature and UVLO monitoring

● Package: top-side cooled 12 mm x 12 mm VQFN:
-   Separates the electrical and thermal paths for very low power loop inductance

Applications

● Switch-mode power converters
● Merchant networks and server PSUs
● Merchant telecom rectifiers
● Solar inverters and industrial motor drives
● Uninterruptable power supplies