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IXFC110N10P Datasheet

IXFC110N10P Datasheet
Total Pages: 5
Size: 230.7 KB
IXYS
This datasheet covers 1 part numbers: IXFC110N10P
IXFC110N10P Datasheet Page 1
IXFC110N10P Datasheet Page 2
IXFC110N10P Datasheet Page 3
IXFC110N10P Datasheet Page 4
IXFC110N10P Datasheet Page 5

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

17mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3550pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™