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IXFC110N10P

IXFC110N10P

For Reference Only

Part Number IXFC110N10P
PNEDA Part # IXFC110N10P
Description MOSFET N-CH 100V 60A ISOPLUS220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,466
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFC110N10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFC110N10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFC110N10P, IXFC110N10P Datasheet (Total Pages: 5, Size: 230.7 KB)
PDFIXFC110N10P Datasheet Cover
IXFC110N10P Datasheet Page 2 IXFC110N10P Datasheet Page 3 IXFC110N10P Datasheet Page 4 IXFC110N10P Datasheet Page 5

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IXFC110N10P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs17mOhm @ 55A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3550pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS220™
Package / CaseISOPLUS220™

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