BFR93AE6327HTSA1
For Reference Only
| Part Number | BFR93AE6327HTSA1 |
| PNEDA Part # | BFR93AE6327HTSA1 |
| Description | RF TRANS NPN 12V 6GHZ SOT23-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 293,118 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 22 - May 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR93AE6327HTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFR93AE6327HTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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BFR93AE6327HTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 6GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz |
| Gain | 9.5dB ~ 14.5dB |
| Power - Max | 300mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 30mA, 8V |
| Current - Collector (Ic) (Max) | 90mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 100MHz ~ 500MHz Noise Figure (dB Typ @ f) - Gain 8.5dB ~ 10dB Power - Max 140W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V Current - Collector (Ic) (Max) 7A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55JT Supplier Device Package 55JT |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain 18dB ~ 22dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Short Body Supplier Device Package TO-92S |
