BFR93AE6327HTSA1
For Reference Only
| Part Number | BFR93AE6327HTSA1 |
| PNEDA Part # | BFR93AE6327HTSA1 |
| Description | RF TRANS NPN 12V 6GHZ SOT23-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 293,118 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BFR93AE6327HTSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BFR93AE6327HTSA1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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BFR93AE6327HTSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 6GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz |
| Gain | 9.5dB ~ 14.5dB |
| Power - Max | 300mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 30mA, 8V |
| Current - Collector (Ic) (Max) | 90mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5.5GHz Noise Figure (dB Typ @ f) 2.5dB @ 1GHz Gain 17dB Power - Max 180W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 14mA, 10V Current - Collector (Ic) (Max) 30A Operating Temperature 200°C Mounting Type Surface Mount Package / Case M150 Supplier Device Package M150 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 3.3V Frequency - Transition 25GHz Noise Figure (dB Typ @ f) 1.1dB @ 2GHz Gain 17dB Power - Max 115mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 2V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-343F Supplier Device Package SOT-343F |
