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BUK652R7-30C,127

BUK652R7-30C,127

For Reference Only

Part Number BUK652R7-30C,127
PNEDA Part # BUK652R7-30C-127
Description MOSFET N-CH 30V 100A TO220AB
Manufacturer NXP
Unit Price Request a Quote
In Stock 7,434
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 7 - Jun 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK652R7-30C Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK652R7-30C,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK652R7-30C, BUK652R7-30C Datasheet (Total Pages: 16, Size: 369.05 KB)
PDFBUK652R7-30C Datasheet Cover
BUK652R7-30C Datasheet Page 2 BUK652R7-30C Datasheet Page 3 BUK652R7-30C Datasheet Page 4 BUK652R7-30C Datasheet Page 5 BUK652R7-30C Datasheet Page 6 BUK652R7-30C Datasheet Page 7 BUK652R7-30C Datasheet Page 8 BUK652R7-30C Datasheet Page 9 BUK652R7-30C Datasheet Page 10 BUK652R7-30C Datasheet Page 11

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BUK652R7-30C Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs114nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds6960pF @ 25V
FET Feature-
Power Dissipation (Max)204W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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