Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

C3M0016120K

C3M0016120K

For Reference Only

Part Number C3M0016120K
PNEDA Part # C3M0016120K
Description SIC MOSFET G3 1200V 16 MOHM
Manufacturer Cree/Wolfspeed
Unit Price Request a Quote
In Stock 10,008
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

C3M0016120K Resources

Brand Cree/Wolfspeed
ECAD Module ECAD
Mfr. Part NumberC3M0016120K
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • C3M0016120K Datasheet
  • where to find C3M0016120K
  • Cree/Wolfspeed

  • Cree/Wolfspeed C3M0016120K
  • C3M0016120K PDF Datasheet
  • C3M0016120K Stock

  • C3M0016120K Pinout
  • Datasheet C3M0016120K
  • C3M0016120K Supplier

  • Cree/Wolfspeed Distributor
  • C3M0016120K Price
  • C3M0016120K Distributor

C3M0016120K Specifications

ManufacturerCree/Wolfspeed
SeriesC3M™
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1.2kV
Current - Continuous Drain (Id) @ 25°C115A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs22.3mOhm @ 75A, 15V
Vgs(th) (Max) @ Id3.6V @ 23mA
Gate Charge (Qg) (Max) @ Vgs211nC @ 15V
Vgs (Max)+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds6085pF @ 1000V
FET Feature-
Power Dissipation (Max)556W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

The Products You May Be Interested In

SQJ158EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

33mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

DMPH6050SFG-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRF7779L2TR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

375A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6660pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET L8

Package / Case

DirectFET™ Isometric L8

PSMN8R5-100ESQ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

111nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5512pF @ 50V

FET Feature

-

Power Dissipation (Max)

263W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPAW60R380CEXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

3.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

Recently Sold

KSZ8863MLLI

KSZ8863MLLI

Microchip Technology

IC ETHERNET SWITCH 3PORT 48-LQFP

BCR30AM-12LB#B00

BCR30AM-12LB#B00

Renesas Electronics America

TRIAC 600V 30A TO3P

2SC4793(F,M)

2SC4793(F,M)

Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

MAX3218EAP+

MAX3218EAP+

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

STM32F407IGH6

STM32F407IGH6

STMicroelectronics

IC MCU 32BIT 1MB FLASH 176UBGA

SUCS62412C

SUCS62412C

Cosel

DC DC CONVERTER 12V

HSMH-C170

HSMH-C170

Broadcom

LED RED DIFFUSED CHIP SMD

MC34844AEPR2

MC34844AEPR2

NXP

IC LED DRVR RGLTR DIM 80MA 32QFN

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

PCF8593P,112

PCF8593P,112

NXP

IC RTC CLK/CALENDAR I2C 8-DIP

CY62126EV30LL-45ZSXI

CY62126EV30LL-45ZSXI

Cypress Semiconductor

IC SRAM 1M PARALLEL 44TSOP II

SI8540-B-FWR

SI8540-B-FWR

Silicon Labs

IC CURR SENSE 1 CIRCUIT SOT23-5