Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CSD17318Q2T

CSD17318Q2T

For Reference Only

Part Number CSD17318Q2T
PNEDA Part # CSD17318Q2T
Description MOSFET N-CHANNEL 30V 25A 6WSON
Manufacturer Texas Instruments
Unit Price Request a Quote
In Stock 19,392
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CSD17318Q2T Resources

Brand Texas Instruments
ECAD Module ECAD
Mfr. Part NumberCSD17318Q2T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CSD17318Q2T Datasheet
  • where to find CSD17318Q2T
  • Texas Instruments

  • Texas Instruments CSD17318Q2T
  • CSD17318Q2T PDF Datasheet
  • CSD17318Q2T Stock

  • CSD17318Q2T Pinout
  • Datasheet CSD17318Q2T
  • CSD17318Q2T Supplier

  • Texas Instruments Distributor
  • CSD17318Q2T Price
  • CSD17318Q2T Distributor

CSD17318Q2T Specifications

Manufacturer
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 8V
Rds On (Max) @ Id, Vgs15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds879pF @ 15V
FET Feature-
Power Dissipation (Max)16W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WSON (2x2)
Package / Case6-WDFN Exposed Pad

The Products You May Be Interested In

3LP01C-TB-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

10.4Ohm @ 50mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.43nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7.5pF @ 10V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CP

Package / Case

TO-236-3, SC-59, SOT-23-3

IPA60R170CFD7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CFD7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1199pF @ 400V

FET Feature

-

Power Dissipation (Max)

26W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

BSP372L6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

310mOhm @ 1.7A, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±14V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

NVMFS5C406NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

52A (Ta), 353A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

0.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 280µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7288pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 179W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

6.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

10000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

Recently Sold

7M24000020

7M24000020

TXC

CRYSTAL 24MHZ 18PF SMD

MTC1S2403MC-R13

MTC1S2403MC-R13

Murata Power Solutions

DC DC CONVERTER 3.3V 1W

STBB1-APUR

STBB1-APUR

STMicroelectronics

IC REG BCK BST ADJ 1.6A 10DFN

TS27L2CDT

TS27L2CDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

MBR130LSFT1G

MBR130LSFT1G

ON Semiconductor

DIODE SCHOTTKY 30V 1A SOD123L

MSP5.0A-M3/89A

MSP5.0A-M3/89A

Vishay Semiconductor Diodes Division

TVS DIODE 5V 10.9V MICROSMP

PIC16F1786-I/SP

PIC16F1786-I/SP

Microchip Technology

IC MCU 8BIT 14KB FLASH 28SDIP

A3972SB-T

A3972SB-T

Allegro MicroSystems, LLC

IC MTR DRV BIPOLR 4.5-5.5V 24DIP

SP0506BAATG

SP0506BAATG

Littelfuse

TVS DIODE 5.5V 8.5V 8MSOP

AT89C51ED2-SLSUM

AT89C51ED2-SLSUM

Microchip Technology

IC MCU 8BIT 64KB FLASH 44PLCC

SMAJ30CA

SMAJ30CA

Bourns

TVS DIODE 30V 48.4V SMA