CSD17318Q2T
For Reference Only
| Part Number | CSD17318Q2T |
| PNEDA Part # | CSD17318Q2T |
| Description | MOSFET N-CHANNEL 30V 25A 6WSON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 19,392 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD17318Q2T Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD17318Q2T |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD17318Q2T Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 8V |
| Rds On (Max) @ Id, Vgs | 15.1mOhm @ 8A, 8V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 879pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 16W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WSON (2x2) |
| Package / Case | 6-WDFN Exposed Pad |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 90mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-XFBGA |
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Manufacturer Infineon Technologies Series CoolMOS™ CFD7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1199pF @ 400V FET Feature - Power Dissipation (Max) 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack |
