Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CSD17318Q2T

CSD17318Q2T

For Reference Only

Part Number CSD17318Q2T
PNEDA Part # CSD17318Q2T
Description MOSFET N-CHANNEL 30V 25A 6WSON
Manufacturer Texas Instruments
Unit Price Request a Quote
In Stock 19,392
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CSD17318Q2T Resources

Brand Texas Instruments
ECAD Module ECAD
Mfr. Part NumberCSD17318Q2T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CSD17318Q2T Datasheet
  • where to find CSD17318Q2T
  • Texas Instruments

  • Texas Instruments CSD17318Q2T
  • CSD17318Q2T PDF Datasheet
  • CSD17318Q2T Stock

  • CSD17318Q2T Pinout
  • Datasheet CSD17318Q2T
  • CSD17318Q2T Supplier

  • Texas Instruments Distributor
  • CSD17318Q2T Price
  • CSD17318Q2T Distributor

CSD17318Q2T Specifications

Manufacturer
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 8V
Rds On (Max) @ Id, Vgs15.1mOhm @ 8A, 8V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds879pF @ 15V
FET Feature-
Power Dissipation (Max)16W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WSON (2x2)
Package / Case6-WDFN Exposed Pad

The Products You May Be Interested In

SI8809EDB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-XFBGA

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

6.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

10000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

FDPF12N60NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1676pF @ 25V

FET Feature

-

Power Dissipation (Max)

39W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

3LP01C-TB-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

10.4Ohm @ 50mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.43nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7.5pF @ 10V

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CP

Package / Case

TO-236-3, SC-59, SOT-23-3

IPA60R170CFD7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CFD7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1199pF @ 400V

FET Feature

-

Power Dissipation (Max)

26W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

Recently Sold

BA6209

BA6209

Rohm Semiconductor

IC MOTOR DRIVER 6V-18V 10HSIP

USB4604-1080HN

USB4604-1080HN

Microchip Technology

IC USB HUB/FLASH CTLR 48QFN

NPT1012B

NPT1012B

M/A-Com Technology Solutions

HEMT N-CH 28V 25W DC-4000MHZ

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

DS5000FP-16

DS5000FP-16

Maxim Integrated

IC MCU 8BIT EXTRNL NVSRAM 80QFP

1N5335BRLG

1N5335BRLG

ON Semiconductor

DIODE ZENER 3.9V 5W AXIAL

REF192GS

REF192GS

Analog Devices

IC VREF SERIES 2.5V 8SOIC

MMSZ5229B-7-F

MMSZ5229B-7-F

Diodes Incorporated

DIODE ZENER 4.3V 500MW SOD123

CK45-R3AD222K-NRA

CK45-R3AD222K-NRA

TDK

CAP CER 2200PF 1KV RADIAL

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

DTC114EETL

DTC114EETL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

MBT3904DW1T1G

MBT3904DW1T1G

ON Semiconductor

TRANS 2NPN 40V 0.2A SC88