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SI8809EDB-T2-E1

SI8809EDB-T2-E1

For Reference Only

Part Number SI8809EDB-T2-E1
PNEDA Part # SI8809EDB-T2-E1
Description MOSFET P-CH 20V 1.9A MICROFOOT
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,608
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8809EDB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8809EDB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8809EDB-T2-E1, SI8809EDB-T2-E1 Datasheet (Total Pages: 8, Size: 140.32 KB)
PDFSI8809EDB-T2-E1 Datasheet Cover
SI8809EDB-T2-E1 Datasheet Page 2 SI8809EDB-T2-E1 Datasheet Page 3 SI8809EDB-T2-E1 Datasheet Page 4 SI8809EDB-T2-E1 Datasheet Page 5 SI8809EDB-T2-E1 Datasheet Page 6 SI8809EDB-T2-E1 Datasheet Page 7 SI8809EDB-T2-E1 Datasheet Page 8

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SI8809EDB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs90mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-XFBGA

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