IPA60R170CFD7XKSA1
For Reference Only
| Part Number | IPA60R170CFD7XKSA1 |
| PNEDA Part # | IPA60R170CFD7XKSA1 |
| Description | MOSFET N-CH TO220FP-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 17,988 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPA60R170CFD7XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPA60R170CFD7XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPA60R170CFD7XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CFD7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1199pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220 Full Pack |
| Package / Case | TO-220-3 Full Pack |
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Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 460mOhm @ 13A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 16000pF @ 25V FET Feature - Power Dissipation (Max) 960W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
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