EMD12FHAT2R
For Reference Only
| Part Number | EMD12FHAT2R |
| PNEDA Part # | EMD12FHAT2R |
| Description | PNP+NPN DIGITAL TRANSISTOR (CORR |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,076 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 5 - Jun 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EMD12FHAT2R Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | EMD12FHAT2R |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Datasheet |
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EMD12FHAT2R Specifications
| Manufacturer | Rohm Semiconductor |
| Series | Automotive, AEC-Q101 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
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Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 1kOhms Resistor - Emitter Base (R2) 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 420mW Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22kOhms Resistor - Emitter Base (R2) 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 100mW Mounting Type Surface Mount Package / Case SOT-553 Supplier Device Package ESV |
