Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FCP11N60N-F102

FCP11N60N-F102

For Reference Only

Part Number FCP11N60N-F102
PNEDA Part # FCP11N60N-F102
Description MOSFET N-CH 600V 10.8A TO220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,438
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 11 - Jun 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP11N60N-F102 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP11N60N-F102
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP11N60N-F102, FCP11N60N-F102 Datasheet (Total Pages: 12, Size: 762.13 KB)
PDFFCP11N60N-F102 Datasheet Cover
FCP11N60N-F102 Datasheet Page 2 FCP11N60N-F102 Datasheet Page 3 FCP11N60N-F102 Datasheet Page 4 FCP11N60N-F102 Datasheet Page 5 FCP11N60N-F102 Datasheet Page 6 FCP11N60N-F102 Datasheet Page 7 FCP11N60N-F102 Datasheet Page 8 FCP11N60N-F102 Datasheet Page 9 FCP11N60N-F102 Datasheet Page 10 FCP11N60N-F102 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FCP11N60N-F102 Datasheet
  • where to find FCP11N60N-F102
  • ON Semiconductor

  • ON Semiconductor FCP11N60N-F102
  • FCP11N60N-F102 PDF Datasheet
  • FCP11N60N-F102 Stock

  • FCP11N60N-F102 Pinout
  • Datasheet FCP11N60N-F102
  • FCP11N60N-F102 Supplier

  • ON Semiconductor Distributor
  • FCP11N60N-F102 Price
  • FCP11N60N-F102 Distributor

FCP11N60N-F102 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35.6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1505pF @ 100V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

STP25N80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

19.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 19.5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

NTD40N03R-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

7.8A (Ta), 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.78nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

584pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

TPCF8107,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

28mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

+20V, -25V

Input Capacitance (Ciss) (Max) @ Vds

970pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VS-8 (2.9x1.5)

Package / Case

8-SMD, Flat Lead

MMDF3N02HDR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 16V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IXFH52N30Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

Recently Sold

MAX3002EUP+

MAX3002EUP+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 20TSSOP

AD9237BCPZ-40

AD9237BCPZ-40

Analog Devices

IC ADC 12BIT PIPELINED 32LFCSP

NPT1012B

NPT1012B

M/A-Com Technology Solutions

HEMT N-CH 28V 25W DC-4000MHZ

PIC32MX250F128D-I/PT

PIC32MX250F128D-I/PT

Microchip Technology

IC MCU 32BIT 128KB FLASH 44TQFP

APT2012SGC

APT2012SGC

Kingbright

LED GREEN CLEAR CHIP SMD

CY2304SXI-1

CY2304SXI-1

Cypress Semiconductor

IC CLK ZDB 4OUT 133MHZ 8SOIC

UC3842BN

UC3842BN

ON Semiconductor

IC REG CTRLR BST FLYBK ISO 8-DIP

CD143A-SR70

CD143A-SR70

Bourns

TVS DIODE 7V SOT143

ADV7181CBSTZ

ADV7181CBSTZ

Analog Devices

IC VIDEO DECODER SDTV RGB 64LQFP

JS28F128J3D75A

JS28F128J3D75A

Micron Technology Inc.

IC FLASH 128M PARALLEL 56TSOP

VLMW1500-GS08

VLMW1500-GS08

Vishay Semiconductor Opto Division

LED COOL WHITE 0402 SMD

IRF7811A

IRF7811A

Infineon Technologies

MOSFET N-CH 28V 11.4A 8-SOIC