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FCP11N60N-F102

FCP11N60N-F102

For Reference Only

Part Number FCP11N60N-F102
PNEDA Part # FCP11N60N-F102
Description MOSFET N-CH 600V 10.8A TO220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,438
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP11N60N-F102 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP11N60N-F102
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP11N60N-F102, FCP11N60N-F102 Datasheet (Total Pages: 12, Size: 762.13 KB)
PDFFCP11N60N-F102 Datasheet Cover
FCP11N60N-F102 Datasheet Page 2 FCP11N60N-F102 Datasheet Page 3 FCP11N60N-F102 Datasheet Page 4 FCP11N60N-F102 Datasheet Page 5 FCP11N60N-F102 Datasheet Page 6 FCP11N60N-F102 Datasheet Page 7 FCP11N60N-F102 Datasheet Page 8 FCP11N60N-F102 Datasheet Page 9 FCP11N60N-F102 Datasheet Page 10 FCP11N60N-F102 Datasheet Page 11

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FCP11N60N-F102 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35.6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1505pF @ 100V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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