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FGB20N6S2D

FGB20N6S2D

For Reference Only

Part Number FGB20N6S2D
PNEDA Part # FGB20N6S2D
Description IGBT 600V 28A 125W TO263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,510
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGB20N6S2D Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGB20N6S2D
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGB20N6S2D, FGB20N6S2D Datasheet (Total Pages: 9, Size: 226.34 KB)
PDFFGP20N6S2D Datasheet Cover
FGP20N6S2D Datasheet Page 2 FGP20N6S2D Datasheet Page 3 FGP20N6S2D Datasheet Page 4 FGP20N6S2D Datasheet Page 5 FGP20N6S2D Datasheet Page 6 FGP20N6S2D Datasheet Page 7 FGP20N6S2D Datasheet Page 8 FGP20N6S2D Datasheet Page 9

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FGB20N6S2D Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)28A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 7A
Power - Max125W
Switching Energy25µJ (on), 58µJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C7.7ns/87ns
Test Condition390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr)31ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 12A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

32nC

Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Supplier Device Package

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

390V, 20A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

Manufacturer

IXYS

Series

GenX4™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

290A

Current - Collector Pulsed (Icm)

800A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 160A

Power - Max

940W

Switching Energy

3.5mJ (on), 1.3mJ (off)

Input Type

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Gate Charge

422nC

Td (on/off) @ 25°C

52ns/197ns

Test Condition

400V, 80A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 30A

Power - Max

300W

Switching Energy

3.47mJ (on), 2.16mJ (off)

Input Type

Standard

Gate Charge

87nC

Td (on/off) @ 25°C

16ns/127ns

Test Condition

960V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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