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FGB20N6S2D

FGB20N6S2D

For Reference Only

Part Number FGB20N6S2D
PNEDA Part # FGB20N6S2D
Description IGBT 600V 28A 125W TO263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,510
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGB20N6S2D Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGB20N6S2D
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGB20N6S2D, FGB20N6S2D Datasheet (Total Pages: 9, Size: 226.34 KB)
PDFFGP20N6S2D Datasheet Cover
FGP20N6S2D Datasheet Page 2 FGP20N6S2D Datasheet Page 3 FGP20N6S2D Datasheet Page 4 FGP20N6S2D Datasheet Page 5 FGP20N6S2D Datasheet Page 6 FGP20N6S2D Datasheet Page 7 FGP20N6S2D Datasheet Page 8 FGP20N6S2D Datasheet Page 9

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FGB20N6S2D Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)28A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 7A
Power - Max125W
Switching Energy25µJ (on), 58µJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C7.7ns/87ns
Test Condition390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr)31ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector Pulsed (Icm)

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480V, 20A, 100Ohm, 15V

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

55µJ (on), 85µJ (off)

Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

17ns/72ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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TO-220-3

Supplier Device Package

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Infineon Technologies

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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