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HGT1S2N120CN

HGT1S2N120CN

For Reference Only

Part Number HGT1S2N120CN
PNEDA Part # HGT1S2N120CN
Description IGBT 1200V 13A 104W I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,606
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGT1S2N120CN Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGT1S2N120CN
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGT1S2N120CN, HGT1S2N120CN Datasheet (Total Pages: 9, Size: 498.55 KB)
PDFHGT1S2N120CN Datasheet Cover
HGT1S2N120CN Datasheet Page 2 HGT1S2N120CN Datasheet Page 3 HGT1S2N120CN Datasheet Page 4 HGT1S2N120CN Datasheet Page 5 HGT1S2N120CN Datasheet Page 6 HGT1S2N120CN Datasheet Page 7 HGT1S2N120CN Datasheet Page 8 HGT1S2N120CN Datasheet Page 9

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HGT1S2N120CN Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)13A
Current - Collector Pulsed (Icm)20A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 2.6A
Power - Max104W
Switching Energy96µJ (on), 355µJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C25ns/205ns
Test Condition960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

36A

Vce(on) (Max) @ Vge, Ic

3.2V @ 12V, 14A

Power - Max

83W

Switching Energy

38µJ (on), 130µJ (off)

Input Type

Standard

Gate Charge

18.3nC

Td (on/off) @ 25°C

4.3ns/36ns

Test Condition

400V, 5A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

NGTB60N65FL2WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 60A

Power - Max

595W

Switching Energy

1.59mJ (on), 660µJ (off)

Input Type

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Gate Charge

318nC

Td (on/off) @ 25°C

117ns/265ns

Test Condition

400V, 60A, 10Ohm, 15V

Reverse Recovery Time (trr)

96ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

RJH60F3DPK-00#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.82V @ 15V, 20A

Power - Max

178.5W

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

140ns

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

260A

Current - Collector Pulsed (Icm)

580A

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 82A

Power - Max

1250W

Switching Energy

5.5mJ (on), 12.5mJ (off)

Input Type

Standard

Gate Charge

340nC

Td (on/off) @ 25°C

34ns/265ns

Test Condition

600V, 80A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

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