HN3C10FUTE85LF
For Reference Only
| Part Number | HN3C10FUTE85LF |
| PNEDA Part # | HN3C10FUTE85LF |
| Description | RF TRANS 2 NPN 12V 7GHZ US6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 8,244 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 4 - Jun 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HN3C10FUTE85LF Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | HN3C10FUTE85LF |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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Notes
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HN3C10FUTE85LF Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | 2 NPN (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Gain | 11.5dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Current - Collector (Ic) (Max) | 80mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
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