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HN3C10FUTE85LF

HN3C10FUTE85LF

For Reference Only

Part Number HN3C10FUTE85LF
PNEDA Part # HN3C10FUTE85LF
Description RF TRANS 2 NPN 12V 7GHZ US6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HN3C10FUTE85LF Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberHN3C10FUTE85LF
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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HN3C10FUTE85LF Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Gain11.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 20mA, 10V
Current - Collector (Ic) (Max)80mA
Operating Temperature-
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6

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