IRF630NPBF
For Reference Only
| Part Number | IRF630NPBF |
| PNEDA Part # | IRF630NPBF |
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 200V 9.3A TO-220AB |
| Unit Price |
|
| In Stock | 45,984 |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Payment |  |
| Shipping |  |
| Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [PNEDA-Warranty]* |
IRF630NPBF Resources
| Brand | Infineon Technologies |
| Mfr. Part Number | IRF630NPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
IRF630NPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 575pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
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