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IRF1902PBF

IRF1902PBF

For Reference Only

Part Number IRF1902PBF
PNEDA Part # IRF1902PBF
Description MOSFET N-CH 20V 4.2A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,130
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF1902PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF1902PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF1902PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds310pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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