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IPB100N06S205ATMA4

IPB100N06S205ATMA4

For Reference Only

Part Number IPB100N06S205ATMA4
PNEDA Part # IPB100N06S205ATMA4
Description MOSFET N-CH 55V 100A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,678
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB100N06S205ATMA4 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB100N06S205ATMA4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB100N06S205ATMA4, IPB100N06S205ATMA4 Datasheet (Total Pages: 8, Size: 155.7 KB)
PDFIPP100N06S205AKSA2 Datasheet Cover
IPP100N06S205AKSA2 Datasheet Page 2 IPP100N06S205AKSA2 Datasheet Page 3 IPP100N06S205AKSA2 Datasheet Page 4 IPP100N06S205AKSA2 Datasheet Page 5 IPP100N06S205AKSA2 Datasheet Page 6 IPP100N06S205AKSA2 Datasheet Page 7 IPP100N06S205AKSA2 Datasheet Page 8

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IPB100N06S205ATMA4 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5110pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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