Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB100N06S205ATMA4

IPB100N06S205ATMA4

For Reference Only

Part Number IPB100N06S205ATMA4
PNEDA Part # IPB100N06S205ATMA4
Description MOSFET N-CH 55V 100A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,678
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB100N06S205ATMA4 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB100N06S205ATMA4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB100N06S205ATMA4, IPB100N06S205ATMA4 Datasheet (Total Pages: 8, Size: 155.7 KB)
PDFIPP100N06S205AKSA2 Datasheet Cover
IPP100N06S205AKSA2 Datasheet Page 2 IPP100N06S205AKSA2 Datasheet Page 3 IPP100N06S205AKSA2 Datasheet Page 4 IPP100N06S205AKSA2 Datasheet Page 5 IPP100N06S205AKSA2 Datasheet Page 6 IPP100N06S205AKSA2 Datasheet Page 7 IPP100N06S205AKSA2 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB100N06S205ATMA4 Datasheet
  • where to find IPB100N06S205ATMA4
  • Infineon Technologies

  • Infineon Technologies IPB100N06S205ATMA4
  • IPB100N06S205ATMA4 PDF Datasheet
  • IPB100N06S205ATMA4 Stock

  • IPB100N06S205ATMA4 Pinout
  • Datasheet IPB100N06S205ATMA4
  • IPB100N06S205ATMA4 Supplier

  • Infineon Technologies Distributor
  • IPB100N06S205ATMA4 Price
  • IPB100N06S205ATMA4 Distributor

IPB100N06S205ATMA4 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5110pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

BSZ035N03MSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5700pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerTDFN

PMN45EN,135

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

40mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 4.5V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

495pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457

AO4453

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

19mOhm @ 9A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 6V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

FKP330C

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

330V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

63mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 25V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3 Full Pack

APT5016BFLLG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

72nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2833pF @ 25V

FET Feature

-

Power Dissipation (Max)

329W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3

Recently Sold

BLM21PG221SN1D

BLM21PG221SN1D

Murata

FERRITE BEAD 220 OHM 0805 1LN

1N4148WS

1N4148WS

ON Semiconductor

DIODE GEN PURP 75V 150MA SOD323F

SLF12575T-470M2R7-PF

SLF12575T-470M2R7-PF

TDK

FIXED IND 47UH 2.7A 52.8 MOHM

TAJD227K010RNJ

TAJD227K010RNJ

CAP TANT 220UF 10% 10V 2917

MAX3096ESE+T

MAX3096ESE+T

Maxim Integrated

IC RECEIVER 0/4 16SO

MMPF0100F0AEP

MMPF0100F0AEP

NXP

IC REG CONV I.MX6 12OUT 56HVQFN

EMVY500ADA101MHA0G

EMVY500ADA101MHA0G

United Chemi-Con

CAP ALUM 100UF 20% 50V SMD

74279226101

74279226101

Wurth Electronics

FERRITE BEAD 100 OHM 1812 1LN

MAX17043G+T

MAX17043G+T

Maxim Integrated

IC 2-WIRE FG MODEL GAUGE LO BATT

MP3V5004GP

MP3V5004GP

NXP

IC PRESSURE SENSOR 8-SOP

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

M30624FGPGP#U3C

M30624FGPGP#U3C

Renesas Electronics America

IC MCU 16BIT 256KB FLASH 100QFP