IPB80N06S2L09ATMA2
For Reference Only
| Part Number | IPB80N06S2L09ATMA2 |
| PNEDA Part # | IPB80N06S2L09ATMA2 |
| Description | MOSFET N-CH 55V 80A TO263-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,996 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 3 - Nov 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB80N06S2L09ATMA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB80N06S2L09ATMA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPB80N06S2L09ATMA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 52A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 125µA |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2620pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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