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IPB80N06S2L09ATMA2

IPB80N06S2L09ATMA2

For Reference Only

Part Number IPB80N06S2L09ATMA2
PNEDA Part # IPB80N06S2L09ATMA2
Description MOSFET N-CH 55V 80A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,996
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB80N06S2L09ATMA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB80N06S2L09ATMA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB80N06S2L09ATMA2 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.2mOhm @ 52A, 10V
Vgs(th) (Max) @ Id2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2620pF @ 25V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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