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IRF7702TR

IRF7702TR

For Reference Only

Part Number IRF7702TR
PNEDA Part # IRF7702TR
Description MOSFET P-CH 12V 8A 8-TSSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7702TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7702TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7702TR, IRF7702TR Datasheet (Total Pages: 8, Size: 138.75 KB)
PDFIRF7702TR Datasheet Cover
IRF7702TR Datasheet Page 2 IRF7702TR Datasheet Page 3 IRF7702TR Datasheet Page 4 IRF7702TR Datasheet Page 5 IRF7702TR Datasheet Page 6 IRF7702TR Datasheet Page 7 IRF7702TR Datasheet Page 8

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IRF7702TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs14mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3470pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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