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IXFN50N80Q2

IXFN50N80Q2

For Reference Only

Part Number IXFN50N80Q2
PNEDA Part # IXFN50N80Q2
Description MOSFET N-CH 800V 50A SOT-227B
Manufacturer IXYS
Unit Price
1 ---------- $487.8646
50 ---------- $464.9959
100 ---------- $442.1273
200 ---------- $419.2586
400 ---------- $400.2014
500 ---------- $381.1442
In Stock 14
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN50N80Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN50N80Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN50N80Q2, IXFN50N80Q2 Datasheet (Total Pages: 4, Size: 120.89 KB)
PDFIXFN50N80Q2 Datasheet Cover
IXFN50N80Q2 Datasheet Page 2 IXFN50N80Q2 Datasheet Page 3 IXFN50N80Q2 Datasheet Page 4

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IXFN50N80Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs160mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13500pF @ 25V
FET Feature-
Power Dissipation (Max)1135W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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