IXFN50N80Q2
For Reference Only
| Part Number | IXFN50N80Q2 | ||||||||||||||||||
| PNEDA Part # | IXFN50N80Q2 | ||||||||||||||||||
| Description | MOSFET N-CH 800V 50A SOT-227B | ||||||||||||||||||
| Manufacturer | IXYS | ||||||||||||||||||
| Unit Price |
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| In Stock | 14 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Jun 22 - Jun 27 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXFN50N80Q2 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXFN50N80Q2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
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Notes
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IXFN50N80Q2 Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 13500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1135W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
| Package / Case | SOT-227-4, miniBLOC |
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